LIGHT-BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL-ACTIVITY OF STACKING-FAULTS IN CZ SILICON

被引：0
|
作者：
CASTALDINI, A [1 ]
CAVALLINI, A [1 ]
POGGI, A [1 ]
SUSI, E [1 ]
机构：
[1] CNR,LAMEL INST,I-40126 BOLOGNA,ITALY
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1989年 / 24卷 / 06期
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O59 [应用物理学];
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页码：169 / 169
页数：1
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