OPTICALLY SWITCHED RESONANT-TUNNELING DIODES

被引：35

作者：

MOISE, TS ^{[1
]}

KAO, YC ^{[1
]}

GARRETT, LD ^{[1
]}

CAMPBELL, JC ^{[1
]}

机构：

[1] UNIV TEXAS,MICROELECTR RES CTR,DEPT ELECTR & COMP ENGN,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.113826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room-temperature photoinduced switching of an InGaAs/AlAs resonant-tunneling diode is demonstrated. When illuminated at an irradiance of greater than 20 W cm-2 using 1.3 μm radiation, the resonant-tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of 600 mV. The switching characteristics are reversible and, in the absence of light, the detector returns to its original high conductance operating state. Small-signal optical measurements performed with the device biased prior to resonance demonstrate a 3 dB bandwidth of ∼1.5 GHz.© 1995 American Institute of Physics.

引用

页码：1104 / 1106

页数：3

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