OPTICALLY SWITCHED RESONANT-TUNNELING DIODES

被引：35

作者：

MOISE, TS ^{[1
]}

KAO, YC ^{[1
]}

GARRETT, LD ^{[1
]}

CAMPBELL, JC ^{[1
]}

机构：

[1] UNIV TEXAS,MICROELECTR RES CTR,DEPT ELECTR & COMP ENGN,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.113826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room-temperature photoinduced switching of an InGaAs/AlAs resonant-tunneling diode is demonstrated. When illuminated at an irradiance of greater than 20 W cm-2 using 1.3 μm radiation, the resonant-tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of 600 mV. The switching characteristics are reversible and, in the absence of light, the detector returns to its original high conductance operating state. Small-signal optical measurements performed with the device biased prior to resonance demonstrate a 3 dB bandwidth of ∼1.5 GHz.© 1995 American Institute of Physics.

引用

页码：1104 / 1106

页数：3

共 50 条

[21] Theory of digital magnetoresistance in ferromagnetic resonant-tunneling diodes
Ertler, Christian
Fabian, Jaroslav
PHYSICAL REVIEW B, 2007, 75 (19)
[22] EXTRINSIC TRISTABILITY AS THE CAUSE OF BISTABILITY IN RESONANT-TUNNELING DIODES
JOGAI, B
SUPERLATTICES AND MICROSTRUCTURES, 1992, 11 (04) : 383 - 385
[23] Comparison of bistable circuits based on resonant-tunneling diodes
González, AF
Mazumder, P
16TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS, 2003, : 493 - 498
[24] Carbon nanotube resonant-tunneling diodes as terahertz oscillators
Dragoman, M
Dragoman, D
2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2003, : 75 - 78
[25] Large-signal dynamics of resonant-tunneling diodes
Ourednik, P.
Picco, G.
Nguyen, D. Tuan
Spudat, C.
Feiginov, M.
JOURNAL OF APPLIED PHYSICS, 2023, 133 (01)
[26] Effect of the device size on the performance of resonant-tunneling diodes
Figielski, T
Morawski, A
Pelya, O
Wosinski, T
Makosa, A
Tkaczyk, Z
Dobrowolski, W
Karczewski, G
Kosiel, K
Dobrzanski, L
EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 55 - 59
[27] RESONANT-TUNNELING DIODES AS SOURCES FOR MILLIMETER AND SUBMILLIMETER WAVELENGTHS
BOUREGBA, R
VANBESIEN, O
MOUNAIX, P
LIPPENS, D
PALMATEER, L
PERNOT, JC
BEAUDIN, G
ENCRENAZ, P
BOCKENHOFF, E
NAGLE, J
BOIS, P
CHEVOIR, F
VINTER, B
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (11) : 2025 - 2027
[28] Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes
Li, Mengwei
Deng, Tao
Du, Kang
Chu, WeiHang
Liu, Jun
Chen, Houjin
Liu, Zewen
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2016, 15 (01):
[29] THE EFFECT OF GROWTH TEMPERATURE ON ALAS GAAS RESONANT-TUNNELING DIODES
FORSTER, A
LANGE, J
GERTHSEN, D
DIEKER, C
LUTH, H
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (01) : 175 - 178
[30] A GAAS PRESSURE SENSOR-BASED ON RESONANT-TUNNELING DIODES
FOBELETS, K
VOUNCKX, R
BORGHS, G
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1994, 4 (03) : 123 - 128

← 1 2 3 4 5 →