A FERROELECTRIC DRAM CELL FOR HIGH-DENSITY NVRAMS

被引：58

作者：

MOAZZAMI, R ^{[1
]}

HU, CM ^{[1
]}

SHEPHERD, WH ^{[1
]}

机构：

[1] NATL SEMICOND CORP,SANTA CLARA,CA 95052

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 10期

关键词：

D O I：

10.1109/55.62994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The operation of a ferroelectric DRAM cell for nonvolatile RAM (NVRAM) applications is described. Because polarization reversal only occurs during nonvolatile store /recall operations but not during read/write operations, ferroelectric fatigue is not a serious endurance problem. For a 3-V power supply, the worst-case effective silicon dioxide thickness of the unoptimized lead zirconate titanate film studied here is less than 17 Å. This cell can be the basis of a very high-density NVRAM with practically no read/write cycle limit and at least 1010 nonvolatile store/recall cycles. © 1990 IEEE

引用

页码：454 / 456

页数：3

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