GENERATION OF DEEP STRUCTURES BY ION-BEAM ETCHING

被引：0
|
作者：
DIMIGEN, H [1 ]
HUBSCH, H [1 ]
机构：
[1] HAMBURG GMBH,PHILIPS FORSCH LAB,VOGT KOLLN STR 300,2000 HAMBURG 54,WEST GERMANY
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C110 / C110
页数：1
相关论文
共 50 条
  • [21] MICROFABRICATION BY ION-BEAM ETCHING.
    Lee, Robert E.
    Semiconductor International, 1980, 3 (01): : 73 - 80
  • [22] ION-BEAM ASSISTED ETCHING AND DEPOSITION
    GAMO, K
    NAMBA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1927 - 1931
  • [23] ION-BEAM ETCHING FOR BETTER BONDING
    不详
    CME-CHARTERED MECHANICAL ENGINEER, 1984, 31 (11): : 101 - 101
  • [24] APPLICATION OF ION-BEAM ETCHING IN MICROELECTRONICS
    EHRIG, K
    SCHLENK, R
    FALZ, M
    BIGL, F
    NEUMANN, H
    FAUST, B
    VACUUM, 1987, 37 (1-2) : 197 - 197
  • [25] ION-BEAM ETCHING OF SURFACE GRATINGS
    SMITH, HI
    MELNGAILIS, J
    WILLIAMSON, RC
    BROGAN, WT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06): : 1127 - 1127
  • [26] ION-BEAM ASSISTED ETCHING.
    Kireev, V.Yu.
    Nazarov, D.A.
    Kuznetsov, V.I.
    Soviet surface engineering and applied electrochemistry, 1986, (06): : 52 - 57
  • [27] VLSI REACTIVE ION-BEAM ETCHING
    CUSTODE, FZ
    FEWER, W
    SPLINTER, M
    DOWNEY, DF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C105 - C105
  • [28] FOCUSED ION-BEAM ETCHING OF NITROCELLULOSE
    YASUOKA, Y
    HARAKAWA, K
    GAMO, K
    NAMBA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 405 - 408
  • [29] BI-LEVEL STRUCTURES FOR FOCUSED ION-BEAM USING MASKLESS ION ETCHING
    MATSUI, S
    MORI, K
    SHIOKAWA, T
    TOYODA, K
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L172 - L174
  • [30] DRY ETCHING OF INGAASP/INP STRUCTURES BY REACTIVE ION-BEAM ETCHING USING CHLORINE AND ARGON
    NISHIBE, T
    NUNOUE, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2449 - L2452
12345