DYNAMIC COMPUTER-SIMULATION OF HIGH-ENERGY ION-IMPLANTATION

被引：8
|
作者：
MOLLER, W
机构：
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期
关键词：
D O I：
10.1016/0921-5107(89)90071-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：21 / 25
页数：5
相关论文
共 50 条
  • [41] PROFILE ENGINEERING FOR SUBMICRON CMOS USING HIGH-ENERGY ION-IMPLANTATION
    STOLMEIJER, A
    PITT, M
    DENBLANKEN, H
    VANDERPLAS, P
    DEWERDT, R
    1989 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS: PROCEEDINGS OF TECHNICAL PAPERS, 1989, : 317 - 320
  • [42] HIGH-ENERGY ION-IMPLANTATION INTO DIAMOND AND CUBIC BORON-NITRIDE
    ZAITSEV, AM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 62 (01): : 81 - 98
  • [43] CARRIER CONCENTRATION PROFILES BY HIGH-ENERGY BORON ION-IMPLANTATION INTO SILICON
    SAYAMA, H
    TAKAI, M
    NAMBA, S
    RYSSEL, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 (pt 2): : 1094 - 1097
  • [44] PROXIMITY GETTERING OF HEAVY-METALS BY HIGH-ENERGY ION-IMPLANTATION
    KUROI, T
    KAWASAKI, Y
    KOMORI, S
    FUKUMOTO, K
    INUISHI, M
    TSUKAMOTO, K
    SHINYASHIKI, H
    SHINGYOJI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 303 - 307
  • [45] COMPUTER-SIMULATION OF SPACE-CHARGE EFFECTS IN TRANSPORT OF HIGH-ENERGY ION-BEAMS
    HABER, I
    GODLOVE, TF
    MASCHKE, AW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (09): : 1198 - 1198
  • [46] COMPUTER-SIMULATION OF SPACE-CHARGE EFFECTS IN TRANSPORT OF HIGH-ENERGY ION-BEAMS
    HABER, I
    MASCHKE, AW
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1978, 68 (04) : 546 - 546
  • [47] DESIGN STUDY OF HIGH-ENERGY, HIGH-CURRENT, RF ACCELERATORS FOR ION-IMPLANTATION
    THOMAE, RW
    DEITINGHOFF, H
    HAUSER, J
    KLEIN, H
    LEIPE, P
    SCHEMPP, A
    WEIS, T
    BANNENBERG, J
    URBANUS, W
    WOJKE, R
    VANAMERSFOORT, PW
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 2 (1-3): : 231 - 235
  • [48] DESIGN STUDY OF HIGH-ENERGY, HIGH-CURRENT RF ACCELERATORS FOR ION-IMPLANTATION
    THOMAE, RW
    DEITINGHOFF, H
    HAUSER, J
    KLEIN, H
    LEIPE, P
    SCHEMPP, A
    WEIS, T
    BANNENBERG, J
    URBANUS, W
    WOJKE, R
    VANAMERSFOORT, PW
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 235 - 239
  • [49] THE INFLUENCE OF ION-IMPLANTATION AND HIGH-ENERGY PROTON IRRADIATION OF SEMICONDUCTORS ON A PHOTOTHERMAL SIGNAL
    GLAZOV, A
    MURATIKOV, K
    JOURNAL DE PHYSIQUE IV, 1994, 4 (C7): : 163 - 166
  • [50] HIGH-ENERGY ION-IMPLANTATION FOR SEMICONDUCTOR APPLICATION AT FRAUNHOFER-AIS, ERLANGEN
    FREY, L
    BOGEN, S
    GONG, L
    JUNG, W
    RYSSEL, H
    GYULAI, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 62 (03): : 410 - 415
12345