LOW-TEMPERATURE OPERATION OF SILICON DYNAMIC RANDOM-ACCESS MEMORIES

被引：16

|

作者：

WYNS, P

ANDERSON, RL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 08期

关键词：

D O I：

10.1109/16.30954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1423 / 1428

页数：6

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