LOW-TEMPERATURE OPERATION OF SILICON DYNAMIC RANDOM-ACCESS MEMORIES

被引：16

作者：

WYNS, P

ANDERSON, RL

机构：

来源：

关键词：

D O I：

10.1109/16.30954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1423 / 1428

页数：6

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[1] TEMPERATURE-DEPENDENCE OF REFRESH TIME IN SILICON DYNAMIC RANDOM-ACCESS MEMORIES
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[J]. ELECTRONIC PRODUCTS MAGAZINE, 1981, 23 (10): : 45 - &
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