PHONON THERMAL-CONDUCTIVITY OF HEAVILY DOPED HOT-PRESSED N-TYPE SI-GE ALLOYS AT HIGH-TEMPERATURES

被引：0
|
作者：
GAUR, NKS [1 ]
机构：
[1] AARHUS UNIV,INST PHYS,DK-8000 AARHUS C,DENMARK
来源：
PHYSICA B & C | 1978年 / 95卷 / 01期
关键词：
D O I：
10.1016/0378-4363(78)90013-X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：99 / 106
页数：8
相关论文
共 50 条
  • [41] MICROSTRUCTURAL AND SPECTRAL INVESTIGATIONS OF THE MECHANISM OF SURFACE-LAYER FORMATION DURING THE OXIDATION OF HOT-PRESSED SI3N4 IN AIR AT HIGH-TEMPERATURES
    ABOUSEKKINA, MM
    GODA, MMA
    RASHAD, M
    HANNA, SB
    [J]. SURFACE TECHNOLOGY, 1985, 25 (01): : 77 - 85
  • [42] Thermoelectric and mechanical properties of a hot pressed nanostructured n-type Si80Ge20 alloy
    Kallel, A. C.
    Roux, G.
    Martin, C. L.
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2013, 564 : 65 - 70
  • [43] Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing
    Milazzo, R.
    Impellizzeri, G.
    Piccinotti, D.
    De Salvador, D.
    Portavoce, A.
    La Magna, A.
    Fortunato, G.
    Mangelinck, D.
    Privitera, V.
    Carnera, A.
    Napolitani, E.
    [J]. APPLIED PHYSICS LETTERS, 2017, 110 (01)
  • [44] HIGH-FIELD DC CONDUCTIVITY IN N-TYPE ZNSE CRYSTALS HEAVILY DOPED WITH INDIUM
    MATHUR, PC
    SETHI, BR
    SHARMA, OP
    TALWAR, PL
    [J]. PHYSICS LETTERS A, 1979, 71 (2-3) : 262 - 264
  • [45] ELECTRON-PHONON SCATTERING PARAMETERS AND LATTICE THERMAL-CONDUCTIVITY OF A DOPED SEMICONDUCTOR AT LOW-TEMPERATURES - APPLICATION TO P-DOPED GE
    DUBEY, KS
    [J]. ACTA PHYSICA POLONICA A, 1981, 59 (03) : 311 - 323
  • [46] THERMAL-CONDUCTIVITY OF BINARY-MIXTURES OF N-HEPTANE AND HEXENE-1 AT HIGH-TEMPERATURES AND PRESSURES
    NAZIEV, YM
    NURBERDYEV, AA
    [J]. HIGH TEMPERATURE, 1974, 12 (04) : 654 - 657
  • [47] Optimization of hot-pressed n-type SbI3-doped Bi2Te2.85Se0.15 compounds
    Seo, JH
    Ju, MC
    Park, K
    Kim, JH
    Lee, CH
    [J]. PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1997, : 114 - 117
  • [48] Ultralow thermal conductivity in n-type Ge-doped AgBiSe2 thermoelectric materials
    Wu, Hsin-Jay
    Wei, Pai-Chun
    Cheng, Hao-Yen
    Deng, Jie-Ru
    Chen, Yang-Yuan
    [J]. ACTA MATERIALIA, 2017, 141 : 217 - 229
  • [49] ROLE OF BOUNDARY SCATTERING IN THE PHONON DRAG THERMOELECTRIC-POWER AND LATTICE THERMAL-CONDUCTIVITY OF A DOPED SEMICONDUCTOR AT LOW-TEMPERATURES - APPLICATION TO PHOSPHORUS DOPED GE
    DUBEY, KS
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 111 (01): : K49 - K54
  • [50] Thermoelectric properties of hot-pressed n-type Bi2Te2.85Se0.15 compounds doped with SbI3
    Seo, J
    Park, K
    Lee, D
    Lee, C
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 49 (03): : 247 - 250
12345