The n-type I-V-VI2 AgBiSe2 features intrinsically low K due to the anharmonicity of chemical bonds. Experimentally-determined isothermal section guides the starting compositions for the following AgBiSe2-based alloys. Among the undoped alloys, the Ag25Bi25Se50 exhibits a highest peak of zT similar to 0.75, and yet the neighboring Ag20Bi27.5Se52.5, which involves a Se-rich liquid phase, has a much lower zT similar to 0.3 at 748 K, respectively. With the incorporation of Ge, the (GeSe)(0.03)(AgBiSe2)0.97 exhibits an ultralow K similar to 0.3 (W/mK), owing to the formation of Bi2Se3 nano-precipitate in the size of 20-40 nm. Additionally, the moire fringes with a periodicity of 0.25 nm are observed in the Bi2Se3 nano-precipitate, implying the presence of local mass fluctuation and superlattice, which could further lead to enhancing phonon scattering and reduced K. As a result, the ultra-low K similar to 0.3 (W/mK) boosts the peak of zT up to zT similar to 1.05 in n-type (GeSe)(0.03)(AgBiSe2)(0.97), which shows a 140% enhancement compared with that of the undoped AgBiSe2. (c) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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JNCASR, New Chem Unit, Jakkur PO, Bangalore, Karnataka, India
JNCASR, Sch Adv Mat, Jakkur PO, Bangalore, Karnataka, IndiaJNCASR, New Chem Unit, Jakkur PO, Bangalore, Karnataka, India
Roychowdhury, Subhajit
Ghosh, Tanmoy
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JNCASR, Sch Adv Mat, Jakkur PO, Bangalore, Karnataka, IndiaJNCASR, New Chem Unit, Jakkur PO, Bangalore, Karnataka, India
Ghosh, Tanmoy
Arora, Raagya
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Arora, Raagya
Waghmare, Umesh V.
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JNCASR, Theoret Sci Unit, Jakkur PO, Bangalore, Karnataka, IndiaJNCASR, New Chem Unit, Jakkur PO, Bangalore, Karnataka, India
Waghmare, Umesh V.
Biswas, Kanishka
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JNCASR, New Chem Unit, Jakkur PO, Bangalore, Karnataka, India
JNCASR, Sch Adv Mat, Jakkur PO, Bangalore, Karnataka, IndiaJNCASR, New Chem Unit, Jakkur PO, Bangalore, Karnataka, India
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City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China
City Univ Hong Kong, State Key Lab Terahertz & Millimeter Waves, Kowloon Tong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China
Musah, Jamal-Deen
Guo, Chen
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City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China
Guo, Chen
Novitskii, Andrei
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Natl Univ Sci & Technol MISiS, Dept Funct Nanosyst & High Temp Mat, Leninsky Ave 4, Moscow 119049, RussiaCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China
Novitskii, Andrei
Serhiienko, Illia
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Natl Univ Sci & Technol MISiS, Dept Funct Nanosyst & High Temp Mat, Leninsky Ave 4, Moscow 119049, RussiaCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China
Serhiienko, Illia
Adesina, Ayotunde Emmanuel
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City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China
Adesina, Ayotunde Emmanuel
Khovaylo, Vladimir
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Natl Univ Sci & Technol MISiS, Dept Funct Nanosyst & High Temp Mat, Leninsky Ave 4, Moscow 119049, RussiaCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China
Khovaylo, Vladimir
Wu, Chi-Man Lawrence
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City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China
Wu, Chi-Man Lawrence
Zapien, Juan Antonio
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City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China
Zapien, Juan Antonio
Roy, Vellaisamy A. L.
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Univ Glasgow, James Watt Sch Engn, Glasgow G12 8QQ, Lanark, ScotlandCity Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China