STUDY OF AN ANDERSON NEGATIVE - U SYSTEM BY MEANS OF HALL-MOBILITY MEASUREMENTS IN SILICON

被引：2

作者：

BOGDANSKI, P

CARIN, R

CRUEGE, F

HAIRIE, A

MADELON, R

METZNER, MN

机构：

[1] LERMAT, ISMRA, URA CNRS N° 1317, Bd du Maréchal Juin

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 126卷 / 1-4期

关键词：

D O I：

10.1080/10420159308219722

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Boron-doped silicon samples have been irradiated by 5.4 GeV Xe ions. In situ Hall effect measurements have been performed during irradiation to determine the hole concentration p/r(H) and the Hall mobility mu(H). The Hall mobility presents a minimum when plotted as a function of the fluence. Simulations point to the fact that this minimum is consistent with the negative-U properties of the silicon vacancy. More, by comparing experimental and calculated p/r(H) and mu(H) curves, introduction rates are estimated as follows : eta(v) congruent-to 6 10(4) cm-1 for vacancies, eta(v2) congruent-to 2 10(3) cm-1 for divacancies and eta(Bi) congruent-to 5 10(3) cm-1 for boron interstitials.

引用

页码：261 / 264

页数：4

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