GA1-XALXAS PURIFICATION DURING ITS LIQUID-PHASE EPITAXIAL-GROWTH IN THE PRESENCE OF YB

被引：15

作者：

RACZYNSKA, J ^{[1
]}

FRONC, K ^{[1
]}

LANGER, JM ^{[1
]}

LISCHKA, K ^{[1
]}

PESEK, A ^{[1
]}

机构：

[1] JOHANNES KEPLER UNIV,INST EXPTL PHYS,A-4040 LINZ,AUSTRIA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.100867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：700 / 702

页数：3

共 50 条

[31] LUMINESCENCE OF GA1-XALXAS/GAAS SINGLE QUANTUM-WELLS GROWN BY LIQUID-PHASE EPITAXY
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[32] MAGNESIUM GALLATE SPINEL - SUBSTRATE FOR DIRECT LIQUID-PHASE EPITAXIAL-GROWTH OF (GA,AL)AS
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[34] LIQUID-PHASE EPITAXIAL-GROWTH OF INAS1-XSBX ON GASB
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[37] NEW TECHNIQUE FOR TERMINATING LIQUID-PHASE EPITAXIAL-GROWTH
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 194 - 197
[39] ULTRAHIGH PURITY LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (9A): : 3692 - 3699
[40] LIQUID-PHASE EPITAXIAL-GROWTH OF COPPER FERRITE FILMS
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