SPONTANEOUS ELECTRIC ABSORPTION IN CADMIUM TELLURIDE AND GALLIUM-ARSENIDE

被引：0

作者：

AKOPYAN, RM ^{[1
]}

BEROZASHVILI, YN ^{[1
]}

DUNDUA, AV ^{[1
]}

LORDKIPANIDZE, DS ^{[1
]}

机构：

[1] ACAD SCI GESSR, CYBERNETICS INST, TBILISI, GEORGIA

来源：

ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1973年 / 65卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2007 / 2015

页数：9

共 50 条

[31] ELECTROABSORPTION OF GALLIUM-ARSENIDE
KUSHEV, DB
SOKOLOV, VI
SUBASHIE.VK
SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (10): : 2488 - +
[32] PHOTOREFLECTION OF GALLIUM-ARSENIDE
PIKHTIN, AN
TODOROV, MT
SEMICONDUCTORS, 1993, 27 (07) : 628 - 631
[33] ELECTRIC LIQUID EPITAXY OF GALLIUM-ARSENIDE IN ALTERNATING ELECTRIC-FIELDS
DEMIN, VN
NAROZHNYAYA, OV
KUZNETSOV, FA
ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (05): : 142 - 146
[34] GALLIUM-ARSENIDE TRANSISTORS
FRENSLEY, WR
SCIENTIFIC AMERICAN, 1987, 257 (02) : 80 - +
[35] GALLIUM-ARSENIDE CHIPS IN
MARTIN, D
CHEMISTRY IN BRITAIN, 1992, 28 (03) : 211 - 212
[36] GALLIUM-ARSENIDE ON SILICON
SHICHIJO, H
ELECTRONICS & WIRELESS WORLD, 1988, 94 (1628): : 609 - 609
[37] SPONTANEOUS OSCILLATIONS IN GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS
GRUBIN, HL
FERRY, DK
GLEASON, KR
SOLID-STATE ELECTRONICS, 1980, 23 (02) : 157 - 172
[38] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS
SCHERER, A
BEEBE, E
CRAIGHEAD, HG
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605
[39] INVESTIGATION OF ALUMINUM GALLIUM-ARSENIDE GALLIUM-ARSENIDE SUPERLATTICES BY ATOMIC FORCE MICROSCOPY
FRIEDBACHER, G
HANSMA, PK
SCHWARZBACH, D
GRASSERBAUER, M
NICKEL, H
ANALYTICAL CHEMISTRY, 1992, 64 (17) : 1760 - 1762
[40] MOBILITY DEGRADATION AND TRANSFERRED ELECTRON EFFECT IN GALLIUM-ARSENIDE AND INDIUM GALLIUM-ARSENIDE
ARORA, VK
MUI, DSL
MORKOC, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1231 - 1238

← 1 2 3 4 5 →