LATTICE-DEFECTS IN AS-IMPLANTED AND CW ND-YAG LASER-ANNEALED SILICON

被引：10
|
作者：
ISHIDA, K
OKABAYASHI, H
YOSHIDA, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期
关键词：
D O I：
10.1063/1.91814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：175 / 177
页数：3
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