TUNNELING AND DARK CURRENTS IN HGCDTE PHOTODIODES

被引:93
|
作者
NEMIROVSKY, Y
ROSENFELD, D
ADAR, R
KORNFELD, A
机构
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D O I
10.1116/1.576215
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:528 / 535
页数:8
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