TUNNELING AND DARK CURRENTS IN HGCDTE PHOTODIODES

被引:93
|
作者
NEMIROVSKY, Y
ROSENFELD, D
ADAR, R
KORNFELD, A
机构
关键词
D O I
10.1116/1.576215
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:528 / 535
页数:8
相关论文
共 50 条
  • [21] INVESTIGATION OF THE GENERATION RECOMBINATION CURRENTS IN HGCDTE MIDWAVELENGTH INFRARED PHOTODIODES
    SCHOOLAR, R
    PRICE, S
    ROSBECK, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1507 - 1514
  • [22] Dark current modelling of midwave infrared HgCdTe gated photodiodes
    Westerhout, R. J.
    Musca, C. A.
    Antoszewski, J.
    Dell, J. M.
    Faraone, L.
    2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES, 2006, : 294 - 297
  • [23] Identification of the Origin of Ultralow Dark Currents in Organic Photodiodes
    Ma, Xiao
    Bin, Haijun
    van Gorkom, Bas T. T.
    van der Pol, Tom P. A.
    Dyson, Matthew J. J.
    Weijtens, Christ H. L.
    Fattori, Marco
    Meskers, Stefan C. J.
    van Breemen, Albert J. J. M.
    Tordera, Daniel
    Janssen, Rene A. J.
    Gelinck, Gerwin H. H.
    ADVANCED MATERIALS, 2023, 35 (08)
  • [24] The influence of recombination mechanisms on the dark current-voltage characteristics of the HgCdTe photodiodes
    Iakovleva, N.I.
    Applied Physics, 2015, 2015-January (05): : 59 - 70
  • [25] Dark Current Transport and Avalanche Mechanism in HgCdTe Electron-Avalanche Photodiodes
    Qiu, Wei-Cheng
    Hu, Wei-Da
    Chen, Lu
    Lin, Chun
    Cheng, Xiang-Ai
    Chen, Xiao-Shuang
    Lu, Wei
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (06) : 1926 - 1931
  • [26] Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures
    Ahmetoglu , M.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2008, 10 (10): : 2507 - 2510
  • [27] Suppression of reverse bias tunneling current in HgCdTe photodiodes formed by rapid thermal diffusion
    Park, SM
    Kim, JM
    Lee, HC
    Kim, CK
    INFRARED TECHNOLOGY AND APPLICATIONS XXIII, PTS 1 AND 2, 1997, 3061 : 78 - 83
  • [28] TUNNELING CURRENTS IN REVERSE BIASED HG1-XCDXTE PHOTODIODES
    NEMIROVSKY, Y
    BLOOM, I
    INFRARED PHYSICS, 1987, 27 (03): : 143 - 151
  • [29] Excess dark currents in HgCdTe p+-n junction diodes
    Gopal, V
    Singh, SK
    Mehra, RM
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (05) : 372 - 376
  • [30] Dark current and noise analysis for Long-wavelength infrared HgCdTe avalanche photodiodes
    Han, Xuepeng
    Guo, Huijun
    Yang, Liao
    Zhu, Liqi
    Yang, Dan
    Xie, Hao
    Wang, Fang
    Chen, Lu
    Chen, Baile
    He, Li
    INFRARED PHYSICS & TECHNOLOGY, 2022, 123