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FORMATION OF DEFECTS IN GALLIUM-ARSENIDE ON IMPLANTATION OF PHOSPHORUS IONS AT VARIOUS TEMPERATURES

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作者：
KOMAROV, FF
TASHLYKOV, IS
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1156 / 1157
页数：2
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