GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111)

被引：182
|
作者：
TUNG, RT
BEAN, JC
GIBSON, JM
POATE, JM
JACOBSON, DC
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期
关键词：
D O I：
10.1063/1.93234
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：684 / 686
页数：3
相关论文
共 50 条
  • [21] Initial nitridation of the CoSi2(111)/Si(111) surface
    Nagashima, A
    Kimura, T
    Nishimura, A
    Yoshino, J
    SURFACE SCIENCE, 1999, 433 : 529 - 533
  • [22] POSITRON-ANNIHILATION IN A SINGLE-CRYSTAL OF COSI2 - EXPERIMENT AND THEORY
    GARREAU, Y
    LERCH, P
    JARLBORG, T
    WALKER, E
    GENOUD, P
    MANUEL, AA
    PETER, M
    PHYSICAL REVIEW B, 1991, 43 (18): : 14532 - 14539
  • [23] Nucleation of single-crystal CoSi2 with oxide-mediated epitaxy
    Kleinschmit, MW
    Yeadon, M
    Gibson, JM
    APPLIED PHYSICS LETTERS, 1999, 75 (21) : 3288 - 3290
  • [24] ATOMIC GEOMETRY AT THE COSI2/SI(111) INTERFACE
    SANTANIELLO, A
    DEPADOVA, P
    JIN, X
    CHANDESRIS, D
    ROSSI, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 1017 - 1021
  • [25] STRUCTURAL STUDY OF COSI2/SI (001) AND (111)
    BULLELIEUWMA, CWT
    VANOMMEN, AH
    VANIJZENDOORN, LJ
    HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 247 - 252
  • [26] CONTROL OF EPITAXIAL ORIENTATION OF SI ON COSI2(111)
    TUNG, RT
    BATSTONE, JL
    APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1611 - 1613
  • [27] A NEW EPITAXIAL ORIENTATION OF COSI2 ON (111) SI
    LIN, WT
    WU, KC
    PAN, FM
    THIN SOLID FILMS, 1992, 215 (02) : 184 - 187
  • [28] STRAIN IN EPITAXIAL COSI2 FILMS ON SI (111) AND INFERENCE FOR PSEUDOMORPHIC GROWTH
    BAI, G
    NICOLET, MA
    VREELAND, T
    YE, Q
    WANG, KL
    APPLIED PHYSICS LETTERS, 1989, 55 (18) : 1874 - 1876
  • [29] FILM THICKNESS EFFECT ON THE EPITAXIAL-GROWTH OF COSI2 ON SI(111)
    JUANG, MH
    CHENG, HC
    THIN SOLID FILMS, 1992, 215 (01) : 71 - 75
  • [30] Ab initio study of the CoSi2(111)/Si(111) interface
    Stadler, R
    Vogtenhuber, D
    Podloucky, R
    PHYSICAL REVIEW B, 1999, 60 (24) : 17112 - 17122
12345