Nucleation of single-crystal CoSi2 with oxide-mediated epitaxy

被引：24
|
作者：
Kleinschmit, MW
Yeadon, M
Gibson, JM
机构：
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Inst Mat Res & Engn, Singapore 119260, Singapore
[3] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[4] Argonne Natl Lab, Mat Res Div, Argonne, IL 60439 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期
关键词：
D O I：
10.1063/1.125327
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Oxide-mediated epitaxy (OME) has shown promise as a technique for the formation of epitaxial CoSi2 on a variety of Si surfaces. With our in situ ultra-high-vacuum transmission electron microscope we have studied the phase formation sequence of the deposited Co during an anneal on both clean and oxide (OME) -covered Si (001) samples. The striking difference in OME is the absence of polycrystalline CoSi2 nucleation. We discuss the origin and consequences of this observation, and report other details of the phase evolution sequence. (C) 1999 American Institute of Physics. [S0003-6951(99)01347-9].
引用
收藏
页码：3288 / 3290
页数：3
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