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- [2] CO DIFFUSION AND GROWTH OF BURIED SINGLE-CRYSTAL COSI2 IN SI(111) BY ENDOTAXYJOURNAL OF APPLIED PHYSICS, 1992, 72 (05) : 1874 - 1878FATHAUER, RWGEORGE, TPIKE, WT
- [3] SINGLE-CRYSTAL GROWTH OF COSI2(110) ON SI(110)APPLIED PHYSICS LETTERS, 1989, 55 (20) : 2075 - 2077YALISOVE, SMEAGLESHAM, DJTUNG, RT
- [4] ALLOTAXIAL GROWTH OF SINGLE-CRYSTAL SI/COSI2/SI(100) HETEROSTRUCTURESAPPLIED SURFACE SCIENCE, 1993, 65-6 : 697 - 703BAY, HLMANTL, SMICHEL, I
- [5] GROWTH OF SINGLE-CRYSTAL COLUMNS OF COSI2 EMBEDDED IN EPITAXIAL SI ON SI(111) BY MOLECULAR-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1989, 55 (03) : 247 - 249FATHAUER, RWNIEH, CWXIAO, QFHASHIMOTO, S
- [6] ON THE GROWTH OF COSI2 AND COSI/SI HETEROSTRUCTURES ON SI(111)SOLID STATE COMMUNICATIONS, 1987, 63 (06) : 445 - 449HENZ, JOSPELT, MVONKANEL, H
- [7] MESOTAXY - SINGLE-CRYSTAL GROWTH OF BURIED COSI2 LAYERSAPPLIED PHYSICS LETTERS, 1987, 50 (02) : 95 - 97WHITE, AESHORT, KTDYNES, RCGARNO, JPGIBSON, JM
- [8] ION CHANNELING STUDY OF SINGLE-CRYSTAL COLUMNS OF COSI2 EMBEDDED IN EPITAXIAL SI ON SI(111) GROWN BY MBENUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 45 (1-4): : 434 - 437HASHIMOTO, SXIAO, QFGIBSON, WMNIEH, CWFATHAUER, RW
- [9] GROWTH OF SINGLE-CRYSTAL COSI2 LAYERS AT ROOM-TEMPERATUREJOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 455 - 460TUNG, RTSCHREY, F
- [10] GROWTH OF COSI2 AND COSI2/SI SUPERLATTICESHETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 215 - 222HENZ, JOSPELT, MVONKANEL, H