SIZE AND HIGH-FIELD EFFECTS IN MOS-FET DEVICES

被引：0
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作者：
PORJESZ, T
ZSOLT, G
KOVACS, G
KARMAN, T
机构：
来源：
ACTA PHYSICA HUNGARICA | 1987年 / 62卷 / 01期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：7 / 9
页数：3
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