DC CHARACTERISTICS OF A MOS-FET WITH A VERTICAL CHANNEL

被引:0
|
作者
PAVLOV, GP
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:76 / 78
页数:3
相关论文
共 50 条
  • [1] PHOTORESPONSES OF MOS-FET
    OKAMOTO, K
    INOUE, S
    [J]. SOLID-STATE ELECTRONICS, 1973, 16 (06) : 657 - 662
  • [2] MOS-FET ANALYZER
    STORM, HF
    [J]. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1970, IM19 (01) : 2 - &
  • [3] POWER MOS-FET
    TOMISAWA, Y
    KURAMOTO, T
    TANABE, H
    IZUMIDA, T
    [J]. TOSHIBA REVIEW, 1979, (124): : 23 - 26
  • [4] MOS-FET FABRICATION PROBLEMS
    KIM, MJ
    [J]. SOLID-STATE ELECTRONICS, 1969, 12 (07) : 557 - +
  • [5] Development of active filter with MOS-FET for 15 MW dc power source
    Kido, G.
    Nimori, S.
    Hashi, K.
    Kosuge, M.
    Kudo, H.
    Suda, K.
    Miyoshi, T.
    Nakayama, K.
    Takushita, K.
    [J]. YAMADA CONFERENCE LX ON RESEARCH IN HIGH MAGNETIC FIELDS, 2006, 51 : 580 - +
  • [6] Experimental evaluation of MOS-FET snubber circuit
    Tezak, O
    Dolinar, D
    Milanovic, M
    [J]. IEEE REGION 8 EUROCON 2003, VOL A, PROCEEDINGS: COMPUTER AS A TOOL, 2003, : 146 - 150
  • [7] REQUIREMENTS FOR PARALLEL CONNECTED POWER MOS-FET
    LORENZ, L
    WISSMANN, G
    [J]. ETZ ARCHIV, 1986, 8 (01): : 23 - 30
  • [8] HIGH-POWER MOS-FET WITH A VERTICAL DRAIN ELECTRODE AND MESHED GATE STRUCTURE
    YOSHIDA, I
    KUBO, M
    OCHI, S
    OHMURA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 179 - 183
  • [9] A VOLTAGE-CONTROLLED MOS-FET INTEGRATOR
    WHITE, MH
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (03): : 421 - +
  • [10] SUBSTRATE CURRENT DUE TO IMPACT IONIZATION IN MOS-FET
    KAMATA, T
    TANABASHI, K
    KOBAYASHI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1127 - 1133