P-N-JUNCTIONS INTERCHANGEABLE TEMPERATURE TRANSDUCERS

被引：1

作者：

ENFIELD, CG

HSIEH, JJC

机构：

来源：

关键词：

D O I：

10.1097/00010694-197201000-00012

中图分类号：

S15 [土壤学];

学科分类号：

0903 ; 090301 ;

摘要：

引用

页码：59 / &

共 50 条

[41] REVISED MODEL OF ASYMMETRIC P-N-JUNCTIONS
REDFIELD, D
APPLIED PHYSICS LETTERS, 1979, 35 (02) : 182 - 184
[42] INJECTION EFFICIENCY OF P-N-JUNCTIONS IN SILICON
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KOROBKOV, NN
OTBLESK, AE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 493 - 494
[43] DIELECTRIC PROPERTIES OF SILICON P-N-JUNCTIONS
BARSONY, I
JONSCHER, AK
SOLID-STATE ELECTRONICS, 1978, 21 (02) : 471 - 473
[44] SOUND INVESTIGATIONS OF SILICON P-N-JUNCTIONS
GELLER, IK
DORIN, VA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1968, (06): : 71 - &
[45] BREAKDOWN WALKOUT IN PLANAR P-N-JUNCTIONS
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MEINDL, JD
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[46] MEASUREMENTS OF LOCAL SURFACE-TEMPERATURE USING P-N-JUNCTIONS OF SEMICONDUCTOR
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[47] DIFFUSION P-N-JUNCTIONS MADE OF P-INAS
YESINA, NP
ZOTOVA, NV
NASLEDOV, DN
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (06): : 952 - &
[48] FRACTAL-DIFFUSED P-N-JUNCTIONS IN SILICON
BAGRAEV, NT
KLYACHKIN, LE
MALYARENKO, AM
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[49] INJECTION INSTABILITY IN SEMICONDUCTOR STRUCTURES WITH P-N-JUNCTIONS
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KNAB, OD
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[50] EFFECT OF HYDROGEN IMPLANTATION ON POLYSILICON P-N-JUNCTIONS
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GUZMAN, AM
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 270 - 274