P-N-JUNCTIONS INTERCHANGEABLE TEMPERATURE TRANSDUCERS

被引：1

作者：

ENFIELD, CG

HSIEH, JJC

机构：

来源：

关键词：

D O I：

10.1097/00010694-197201000-00012

中图分类号：

S15 [土壤学];

学科分类号：

0903 ; 090301 ;

摘要：

引用

页码：59 / &

共 50 条

[21] METHOD OF DECORATING P-N-JUNCTIONS IN SILICON
KURMASHEV, VI
PETROVICH, VA
INDUSTRIAL LABORATORY, 1979, 45 (02): : 182 - 183
[22] ELECTRET STATE OF P-N-JUNCTIONS WITH DISLOCATIONS
YAKIMOV, EB
YARYKIN, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1078 - 1079
[23] BOUNDARY-CONDITIONS AT P-N-JUNCTIONS
HEASELL, EL
SOLID-STATE ELECTRONICS, 1979, 22 (10) : 853 - 856
[24] MECHANISM OF EXCESS CURRENTS IN P-N-JUNCTIONS
KERNER, BS
OSIPOV, VV
SMOLIN, OV
SUKHANOV, AN
TAUBKIN, II
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1090 - 1091
[25] INTERPRETATION OF TEM IMAGES OF P-N-JUNCTIONS
VECCHIO, GL
MORANDI, G
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02): : 383 - 390
[26] MECHANISM OF POPCORN NOISE IN P-N-JUNCTIONS
ASTAKHOV, VP
DUDKIN, VF
KERNER, BS
OSIPOV, VV
SMOLIN, OV
TAUBKIN, II
SOVIET MICROELECTRONICS, 1989, 18 (05): : 266 - 273
[27] HYDROGEN IMMOBILIZATION IN SILICON P-N-JUNCTIONS
JOHNSON, NM
HERRING, C
PHYSICAL REVIEW B, 1988, 38 (02): : 1581 - 1584
[28] AMORPHOUS P-N-JUNCTIONS - CURIOSITY OR BREAKTHROUGH
HOLMESSIEDLE, A
NATURE, 1976, 260 (5553) : 667 - 668
[29] POTENTIAL DISTRIBUTIONS IN SURFACE P-N-JUNCTIONS
HILL, JS
WALTON, AK
NICOL, WS
SOLID-STATE ELECTRONICS, 1972, 15 (03) : 265 - &
[30] THEORY OF MICROPLASMA PHENOMENA IN P-N-JUNCTIONS
ALADINSKII, VK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1731 - 1736