THERMAL WARPAGE OF LARGE DIAMETER CZOCHRALSKI-GROWN SILICON-WAFERS

被引：19

作者：

SHIMIZU, H ^{[1
]}

AOSHIMA, T ^{[1
]}

机构：

[1] HITACHI LTD, MUSASHI WORKS, KODAIRA, TOKYO 187, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.2315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2315 / 2323

页数：9

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