ION-IMPLANTATION OF OPTICAL-DEVICES

The use of accelerators for research and technology in the field of optical materials is outlined. We stress the application of ion beams of 1 to 10 MeV energy for optical waveguide formation and for waveguide doping. This includes ion beam mixing and doping of semiconductor heterostructures, doping of glass guides with laser active ions, guide formation in ceramic single crystals by MeV He implantation and the associated index modification by electronic and nuclear energy transfer. Recent results of RBS/channeling/PIXE studies of dopant lattice locations are also discussed.