IMPURITY SEGREGATION CORRELATED WITH MICROSTRUCTURE IN BURIED OXIDE SILICON-ON-INSULATOR STRUCTURES

被引:1
|
作者
PUGA, MM
BURK, DE
机构
关键词
D O I
10.1063/1.100387
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:122 / 124
页数:3
相关论文
共 50 条
  • [31] Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure
    Ishikawa, Y
    Imai, Y
    Ikeda, H
    Tabe, M
    APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3162 - 3164
  • [32] MICROSTRUCTURE OF SILICON-ON-INSULATOR STRUCTURES PRODUCED BY HIGH-DOSE NITROGEN IMPLANTATION OF SILICON
    MEEKISON, CD
    BOOKER, GR
    REESON, KJ
    HEMMENT, PLF
    CHATER, RJ
    KILNER, JA
    DAVIS, JR
    VACUUM, 1986, 36 (11-12) : 925 - 928
  • [33] PHOTOLUMINESCENCE AND MICROSTRUCTURAL PROPERTIES OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR
    DUNCAN, WM
    CHANG, PH
    MAO, BY
    CHEN, CE
    APPLIED PHYSICS LETTERS, 1987, 51 (10) : 773 - 775
  • [34] Silicon-on-insulator structures with a nitrogenated buried SiO2 layer: Preparation and properties
    I. E. Tyschenko
    V. P. Popov
    Semiconductors, 2011, 45 : 325 - 332
  • [35] Silicon-on-insulator structures with a nitrogenated buried SiO2 layer: Preparation and properties
    Tyschenko, I. E.
    Popov, V. P.
    SEMICONDUCTORS, 2011, 45 (03) : 325 - 332
  • [36] REDISTRIBUTION OF FE, CR AND MO IN BURIED OXIDE SILICON-ON-INSULATOR STRUCTURES DURING HIGH-TEMPERATURE FURNACE ANNEALING
    PUGA, MMS
    HUMMEL, RE
    BURK, DE
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (08) : 1058 - 1066
  • [37] Birefringence compensation in silicon-on-insulator planar waveguide demultiplexers using a buried oxide layer
    Cheben, P
    Xu, DX
    Janz, S
    Delage, A
    Dalacu, D
    PHOTONICS PACKAGING AND INTEGRATION III, 2003, 4997 : 181 - 189
  • [38] Dose dependence of microstructural development of buried oxide in oxygen implanted silicon-on-insulator material
    Bagchi, S
    Krause, SJ
    Roitman, P
    APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2136 - 2138
  • [39] Silicon-on-insulator substrates with buried ground, planes (GPSOI)
    Bain, M
    Stefanos, S
    Baine, P
    Loh, SH
    Jin, A
    Montgomery, JH
    Armstrong, BM
    Gamble, HS
    Hamel, J
    McNeill, DW
    Kraft, A
    Kemhadjian, H
    SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES OPERATING IN A HARSH ENVIRONMENT, 2005, 185 : 273 - 278
  • [40] PHOTOLUMINESCENCE AND MICROSTRUCTURAL PROPERTIES OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR
    DUNCAN, WM
    CHANG, PH
    MAO, BY
    CHEN, CE
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A12 - A12