TRANSMISSION ELECTRON-MICROSCOPY OF INP-BASED COMPOUND SEMICONDUCTOR-MATERIALS AND DEVICES

被引：0

作者：

CHU, SNG

机构：

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1990年 / 20卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：339 / 363

页数：25

共 50 条

[21] TRANSMISSION ELECTRON-MICROSCOPY OF METASTABLE MATERIALS
HULTMAN, L
NONEQUILIBRIUM MATERIALS, 1995, 103 : 181 - 192
[22] CHARACTERIZATION OF SEMICONDUCTOR SILICON BY TRANSMISSION ELECTRON-MICROSCOPY
TAN, TY
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 452 : 170 - 176
[23] PROBING SEMICONDUCTOR INTERFACES BY TRANSMISSION ELECTRON-MICROSCOPY
STEEDS, JW
CHERNS, D
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 344 (1673): : 545 - 556
[24] TRANSMISSION ELECTRON-MICROSCOPY OF GA(0.18) IN(0.82) AS ON INP
DUREL, S
POUDOULEC, A
LECORRE, A
LECROSNIER, D
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1990, 45 (251): : 124 - 126
[25] HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF INP
WILLIAMS, JO
CRAWFORD, ES
BROWN, GT
COCKAYNE, B
JOURNAL OF MATERIALS SCIENCE LETTERS, 1982, 1 (11) : 499 - 502
[26] ELECTRICAL CHARACTERIZATION OF SEMICONDUCTOR-MATERIALS AND DEVICES
SCHRODER, DK
ACS SYMPOSIUM SERIES, 1986, 295 : 18 - 33
[27] STM APPLICATIONS FOR SEMICONDUCTOR-MATERIALS AND DEVICES
LIPARI, NO
SURFACE SCIENCE, 1987, 181 (1-2) : 285 - 294
[28] SEMICONDUCTOR-MATERIALS FOR FUTURE DISPLAY DEVICES
TANSLEY, TL
OWEN, SJT
ELECTROCOMPONENT SCIENCE AND TECHNOLOGY, 1976, 3 (02): : 67 - 75
[29] SPECIAL ISSUE ON QUATERNARY COMPOUND SEMICONDUCTOR-MATERIALS AND DEVICES - SOURCES AND DETECTORS - FORWORD
STILLMAN, GE
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 117 - 117
[30] ANALYTICAL TRANSMISSION ELECTRON-MICROSCOPY OF MATERIALS IN JAPAN
BANDO, Y
JOURNAL OF ELECTRON MICROSCOPY, 1989, 38 : S81 - S89

← 1 2 3 4 5 →