CHARACTERIZATION OF SI-SIO2 INTERFACE WITH C1-IONS BY LOW-TEMPERATURE ELECTRON CONDUCTION MEASUREMENTS

被引：3

作者：

YAGI, A ^{[1
]}

NAMIKI, M ^{[1
]}

KUSUDA, K ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

SURFACE SCIENCE | 1978年 / 73卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90479-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：129 / 134

页数：6

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