CYCLOTRON-RESONANCE OF CHARGE-CARRIERS IN STRAINED GE/GE1-XSIX HETEROSTRUCTURES

被引：0
|
作者：
GAVRILENKO, VI [1 ]
KOZLOV, IN [1 ]
KUZNETSOV, OA [1 ]
MOLDAVSKAYA, MD [1 ]
NIKONOROV, VV [1 ]
ORLOV, LK [1 ]
CHERNOV, AL [1 ]
机构：
[1] NIZHNII NOVGOROD STATE UNIV,INST SCI RES PHYSICOTECH,NIZHNII NOVGOROD 603003,RUSSIA
来源：
JETP LETTERS | 1994年 / 59卷 / 05期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The cyclotron resonance of photogenerated carriers in a strained, multilayer, undoped Ge/Ge1-xSix heterostructure has been studied for the first time. The spectra of the absorption and the millimeter-range photoconductivity spectra have a line corresponding to a cyclotron resonance of carriers with an effective mass m(c) congruent-to 0.07 m0. This value corresponds to the transverse mass of holes at the bottom of the deformed quantum wells in the Ge layers. A residual photoconductivity is observed. It results from holes which remain in Ge layers after the interband illumination is turned off.
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页码：348 / 352
页数：5
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