Resonant acceptor states in Ge/Ge1-xSix MQW heterostructures

被引：14
|
作者：
Aleshkin, VY [1 ]
Andreev, BA [1 ]
Gavrilenko, VI [1 ]
Erofeeva, IV [1 ]
Kozlov, DV [1 ]
Kuznetsov, OA [1 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia
来源：
NANOTECHNOLOGY | 2000年 / 11卷 / 04期
关键词：
D O I：
10.1088/0957-4484/11/4/331
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new nonvariational theoretical approach allowing us to calculate both the localized and the continuum states of charge carriers in quantum well heterostructures in the presence of the Coulomb potential has been developed. The method has been used to calculate the energy spectra of shallow accepters in strained Ge/GeSi multiple-quantum-well heterostructures. Optical transitions from the acceptor ground states to the resonant states have been revealed in the measured far-infrared photoconductivity spectra of the heterostructures.
引用
收藏
页码：348 / 350
页数：3
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