CYCLOTRON-RESONANCE OF CHARGE-CARRIERS IN STRAINED GE/GE1-XSIX HETEROSTRUCTURES

被引：0
|
作者：
GAVRILENKO, VI [1 ]
KOZLOV, IN [1 ]
KUZNETSOV, OA [1 ]
MOLDAVSKAYA, MD [1 ]
NIKONOROV, VV [1 ]
ORLOV, LK [1 ]
CHERNOV, AL [1 ]
机构：
[1] NIZHNII NOVGOROD STATE UNIV,INST SCI RES PHYSICOTECH,NIZHNII NOVGOROD 603003,RUSSIA
来源：
JETP LETTERS | 1994年 / 59卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The cyclotron resonance of photogenerated carriers in a strained, multilayer, undoped Ge/Ge1-xSix heterostructure has been studied for the first time. The spectra of the absorption and the millimeter-range photoconductivity spectra have a line corresponding to a cyclotron resonance of carriers with an effective mass m(c) congruent-to 0.07 m0. This value corresponds to the transverse mass of holes at the bottom of the deformed quantum wells in the Ge layers. A residual photoconductivity is observed. It results from holes which remain in Ge layers after the interband illumination is turned off.
引用
收藏
页码：348 / 352
页数：5
相关论文
共 50 条
  • [41] STRAIN RELAXATION OF GE1-XSIX BUFFER SYSTEMS GROWN ON GE(001)
    LI, JH
    HOLY, V
    BAUER, G
    NUTZEL, JF
    ABSTREITER, G
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (06) : 789 - 791
  • [42] Contributions of the electron-electron interaction and weak localization to the conductance of p-Ge/Ge1-xSix heterostructures
    Arapov, Yu. G.
    Gudina, S. V.
    Karskanov, I. V.
    Neverov, V. N.
    Harus, G. I.
    Shelushinina, N. G.
    [J]. LOW TEMPERATURE PHYSICS, 2007, 33 (2-3) : 160 - 164
  • [43] Transport properties of two-dimensional hole gas in a Ge1-xSix/Ge/Ge1-xSix quantum well in the vicinity of metal-insulator transition
    Arapov, Yu. G.
    Neverov, V. N.
    Harus, G. I.
    Shelushinina, N. G.
    Yakunin, M. V.
    Guldina, S. V.
    Karskanov, I. V.
    Kuznetsov, O. A.
    de Visser, A.
    Ponomarenko, L.
    [J]. SEMICONDUCTORS, 2007, 41 (11) : 1315 - 1322
  • [44] SCATTERING OF CHARGE-CARRIERS IN AN IRRADIATED N-TYPE SILICON ON CYCLOTRON-RESONANCE DATA
    KUROCHKIN, LA
    GATALSKAYA, VI
    [J]. DOKLADY AKADEMII NAUK BELARUSI, 1982, 26 (02): : 128 - 131
  • [45] CZOCHRALSKI GROWTH OF GE1-XSIX ALLOY CRYSTALS
    YONENAGA, I
    MATSUI, A
    TOZAWA, S
    SUMINO, K
    FUKUDA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 154 (3-4) : 275 - 279
  • [46] STUDY OF HOLE SCATTERING IN GE BY CYCLOTRON-RESONANCE
    GERSHENSON, EM
    GUSINSKII, EN
    RABINOVICH, RI
    SOINA, NV
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 64 (01): : 367 - 375
  • [47] Reconstruction of the 2D hole gas spectrum for selectively doped p-Ge/Ge1-xSix heterostructures
    Arapov, YG
    Harus, GI
    Neverov, VN
    Shelushinina, NG
    Yakunin, MV
    Kuznetsov, OA
    [J]. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2003, 96 (01) : 118 - 128
  • [48] Melt zone growth of Ge-rich Ge1-xSix bulk crystals
    Kostylev, I.
    Woodacre, J. K.
    Lee, Y. P.
    Klages, P.
    Labrie, D.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2013, 377 : 147 - 152
  • [49] Czochralski growth of bulk crystals of Ge1-xSix alloys
    Matsui, A
    Yonenaga, I
    Sumino, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 183 (1-2) : 109 - 116
  • [50] The extrinsic photoconductivity of chalcogens in Ge1-xSix solid solutions
    Radchuk, NB
    Ushakov, AY
    [J]. SEMICONDUCTORS, 2005, 39 (05) : 521 - 522
12345