MODEL OF HYDROGENATED AMORPHOUS-SILICON

被引：48

作者：

GUTTMAN, L

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.23.1866

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：1866 / 1874

页数：9

共 50 条

[41] NITROGEN DOPING IN HYDROGENATED AMORPHOUS-SILICON
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[42] DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON
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