MODEL OF HYDROGENATED AMORPHOUS-SILICON

被引：48
|
作者：
GUTTMAN, L
机构：
来源：
PHYSICAL REVIEW B | 1981年 / 23卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.23.1866
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1866 / 1874
页数：9
相关论文
共 50 条
  • [21] PERSISTENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON
    CHOI, SH
    PARK, GL
    LEE, CC
    JANG, J
    SOLID STATE COMMUNICATIONS, 1986, 59 (03) : 177 - 181
  • [22] HYDROGENATED AMORPHOUS-SILICON DOPED WITH DYSPROSIUM
    KULIKOV, GS
    MEZDROGINA, MM
    PERSHEEV, SK
    ABDURAKHMANOV, KP
    SEMICONDUCTORS, 1993, 27 (06) : 583 - 584
  • [23] OPTICAL BISTABILITY IN HYDROGENATED AMORPHOUS-SILICON
    TANN, J
    GAL, M
    MEANEY, K
    TAYLOR, PC
    APPLIED PHYSICS LETTERS, 1990, 56 (11) : 1017 - 1018
  • [24] DOPING AND PSEUDODOPING OF HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (09): : 915 - 926
  • [25] LITHIUM STABILITY IN HYDROGENATED AMORPHOUS-SILICON
    BEYER, W
    HERION, J
    ZASTROW, U
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 111 - 114
  • [26] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
    STREET, RA
    ADVANCES IN PHYSICS, 1981, 30 (05) : 593 - 676
  • [27] NOISE IN HYDROGENATED AMORPHOUS-SILICON RESISTORS
    KIM, SK
    VANDERZIEL, A
    PHYSICA B & C, 1980, 98 (04): : 303 - 305
  • [28] HYDROGENATED AMORPHOUS-SILICON AS A BINARY ALLOY
    TAGUENAMARTINEZ, J
    BARRIO, RA
    CASTILLOALVARADO, FL
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (11): : 1679 - 1688
  • [29] STRUCTURAL STUDIES OF HYDROGENATED AMORPHOUS-SILICON
    KNIGHTS, JC
    SOLAR CELLS, 1980, 2 (04): : 409 - 419
  • [30] RECENT RESULTS ON HYDROGENATED AMORPHOUS-SILICON
    STUKE, J
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1985, 15 : 79 - 102
12345