SURFACE-BARRIER HEIGHT IN METAL N-6H-SIC STRUCTURES

被引：15

作者：

SYRKIN, AL ^{[1
]}

ANDREEV, AN ^{[1
]}

LEBEDEV, AA ^{[1
]}

RASTEGAEVA, MG ^{[1
]}

CHELNOKOV, VE ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期

关键词：

SCHOTTKY BARRIER; SURFACE AND INTERFACE STATES; SILICON CARBIDE; SURFACE ENERGY;

D O I：

10.1016/0921-5107(94)04052-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work makes a comparison of some experimental data on surface barrier height with calculations based on classical models of surface barrier formation in semiconductor-metal structures. We have estimated the dependences of surface barrier height on surface states density, the value of Fermi level surface ''pinning'', metal workfunction and uncompensated donors concentration. These calculations together with available experimental data made it possible to estimate surface properties of real 6H-SiC-metal structures.

引用

页码：198 / 201

页数：4

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