共 50 条
- [42] CHARACTERISTICS OF CHANGES IN THE RECOMBINATION PARAMETERS OF VARIABLE-GAP STRUCTURES DUE TO IRRADIATION WITH NEUTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (10): : 1150 - 1151
- [43] RECOMBINATION RADIATION EMITTED BY VARIABLE-GAP SEMICONDUCTORS UNDER THE MAGNETOCONCENTRATION EFFECT CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (03): : 326 - 327
- [44] ELECTRON-OPTICAL CONVERTERS IN FLAW DETECTION WITH IONIZING-RADIATION SOVIET JOURNAL OF NONDESTRUCTIVE TESTING-USSR, 1983, 19 (08): : 605 - 609
- [45] THERMIONIC CURRENTS IN VARIABLE-GAP STRUCTURES WITH LINEAR-GRADIENT AND ABRUPT HETEROJUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 147 - 152
- [46] PULSED IONIZING-RADIATION RECOVERY CHARACTERISTICS OF MSI GAAS INTEGRATED-CIRCUITS ELECTRON DEVICE LETTERS, 1981, 2 (07): : 173 - 176
- [47] PHOTOELECTRIC PROPERTIES OF VARIABLE-GAP AU-GA1-XAIXAS STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 579 - 581
- [48] PHOTO-ELECTRIC EFFECT IN VARIABLE-GAP SURFACE-BARRIER STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (01): : 54 - 57