PHOTON TRANSPORT OF CARRIERS IN VARIABLE-GAP METAL-SEMICONDUCTOR STRUCTURES.

被引：0

作者：

Gabaraev, R.S. ^{[1
]}

Kravchenko, A.F. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR, Inst, of Semiconductor Physics,, Novosibirsk, USSR, Acad of Sciences of the USSR, Inst of Semiconductor Physics, Novosibirsk, USSR

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| 1600年 / 18期

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摘要：

SEMICONDUCTOR MATERIALS

引用

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[1] PHOTON TRANSPORT OF CARRIERS IN VARIABLE-GAP METAL-SEMICONDUCTOR STRUCTURES
GABARAEV, RS
KRAVCHENKO, AF
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 750 - 752
[2] PHOTON TRANSPORT OF CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR
VOLKOV, AS
LIPKO, AL
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 262 - 266
[3] SUPERINJECTION OF CARRIERS IN VARIABLE-GAP P - N STRUCTURES.
Kazarinov, R.F.
Suris, R.A.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (01): : 6 - 10
[4] EFFICIENCY OF USE OF PHOTON ENERGY IN VARIABLE-GAP STRUCTURES.
Vasil'ev, A.M.
Vasil'ev, K.M.
Applied Solar Energy (English translation of Geliotekhnika), 1985, 21 (06): : 16 - 19
[5] DRIFT VELOCITY AND DIFFUSION-COEFFICIENT IN PHOTON TRANSPORT OF NONEQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR
REZNIKOV, BI
TSARENKOV, GV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (09): : 1032 - 1035
[6] DIFFERENTIAL OPTOSPECTROMETRIC EFFECT IN A VARIABLE-GAP METAL-SEMICONDUCTOR STRUCTURE.
Berkeliev, A.
Gol'dberg, Yu.A.
Danilova, T.N.
Imenkov, A.N.
Melebaev, D.
Tsarenko, B.V.
Yakovlev, Yu.P.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (12): : 1393 - 1397
[7] PHOTON TRANSPORT OF NON-EQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR BY BAND IMPURITY LEVEL RADIATIVE RECOMBINATION
TSARENKOV, GV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 284 - 290
[8] VARIABLE-GAP STRUCTURES IN A FERROELECTRIC SEMICONDUCTOR.
Sandomirskii, V.B.
Chenskii, E.V.
Khalilov, Sh.S.
Soviet physics. Technical physics, 1982, 27 (12): : 1506 - 1507
[9] TRANSPORT OF NONEQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR UNDER IMPURITY RADIATIVE RECOMBINATION CONDITIONS
VOLKOV, AS
LIPKO, AL
MERETLIEV, S
SHLENSKII, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (03): : 292 - 294
[10] EFFECTIVE RADIATIVE LIFETIME OF NONEQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR
TSARENKOV, GV
REZNIKOV, BI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1167 - 1170

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