PHOTON TRANSPORT OF CARRIERS IN VARIABLE-GAP METAL-SEMICONDUCTOR STRUCTURES.

被引：0

作者：

Gabaraev, R.S. ^{[1
]}

Kravchenko, A.F. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR, Inst, of Semiconductor Physics,, Novosibirsk, USSR, Acad of Sciences of the USSR, Inst of Semiconductor Physics, Novosibirsk, USSR

来源：

| 1600年 / 18期

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摘要：

SEMICONDUCTOR MATERIALS

引用

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[31] PHOTOLUMINESCENCE OF A VARIABLE-GAP SEMICONDUCTOR EXCITED BY SINUSOIDALLY MODULATED LIGHT
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[39] PROFILE OF THE ABSORPTION-EDGE OF VARIABLE-GAP STRUCTURES MADE OF III-V SEMICONDUCTOR COMPOUNDS
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