LOW-TEMPERATURE REACTIVE-ION ETCHING OF INP

被引：0
|
作者：
DERKITS, G [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C195 / C195
页数：1
相关论文
共 50 条
  • [41] Nanostructure fabrication by reactive-ion etching of laser-focused chromium on silicon
    J.J. McClelland
    R. Gupta
    R.J. Celotta
    G.A. Porkolab
    Applied Physics B, 1998, 66 : 95 - 98
  • [42] Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP/InGaAsP
    Strasser, P.
    Wueest, R.
    Robin, F.
    Erni, D.
    Jaeckel, H.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (02): : 387 - 393
  • [43] Analysis of sidewall quality in through-wafer deep reactive-ion etching
    Pike, WT
    Karl, WJ
    Kumar, S
    Vijendran, S
    Semple, T
    MICROELECTRONIC ENGINEERING, 2004, 73-4 : 340 - 345
  • [44] LOW-TEMPERATURE PASSIVATION OF INP
    BAHIR, G
    JIN, M
    MERZ, JL
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A30 - A30
  • [45] DIRECT TRANSFER OF RESIST GRATING PATTERNS ONTO INP BY REACTIVE-ION ETCHING USING CCL4/O2
    HIRATA, K
    MIKAMI, O
    SAITOH, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 45 - 48
  • [46] THE EFFECT OF CHAMBER CONFIGURATIONS AND BIAS VOLTAGES ON DAMAGE INDUCED IN SI BY REACTIVE-ION ETCHING
    PANG, SW
    HORWITZ, CM
    RATHMAN, DD
    CABRAL, SM
    SILVERSMITH, DJ
    MOUNTAIN, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C83 - C83
  • [47] Low-temperature dry etching of GaAs and AlGaAs using 92-MHz anode-coupled chlorine reactive ion etching
    Saitoh, T
    Sogawa, T
    Kanbe, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7650 - 7654
  • [48] LOW-TEMPERATURE DRY ETCHING
    TACHI, S
    TSUJIMOTO, K
    ARAI, S
    KURE, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 796 - 803
  • [49] Effect of reactive-ion etching on thermal oxide properties on 4H-SiC
    Matocha, Kevin
    Cowen, Chris
    Beaupre, Rich
    Tucker, Jesse
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 983 - +
  • [50] REACTIVE-ION ETCHING (RIE) OF TASI2/N+ POLYSILICON BILAYERS
    SUN, SP
    MURARKA, SP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (09) : 2353 - 2357
12345