LOW-TEMPERATURE REACTIVE-ION ETCHING OF INP

被引:0
|
作者
DERKITS, G [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C195 / C195
页数:1
相关论文
共 50 条
  • [31] THE APPLICATION OF REACTIVE ION ETCHING IN PRODUCING FREESTANDING MICROSTRUCTURES AND ITS EFFECTS ON LOW-TEMPERATURE ELECTRICAL TRANSPORT
    KWONG, YK
    LIN, K
    HAKONEN, P
    PARPIA, JM
    ISAACSON, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 2020 - 2024
  • [32] Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching
    Chang, MN
    Chuo, CC
    Lu, CM
    Hsieh, KC
    Yeh, NT
    Chyi, JI
    APPLIED PHYSICS LETTERS, 1999, 75 (19) : 3032 - 3034
  • [33] A SHOCK-TRACKING ALGORITHM FOR SURFACE EVOLUTION UNDER REACTIVE-ION ETCHING
    HAMAGUCHI, S
    DALVIE, M
    FAROUKI, RT
    SETHURAMAN, S
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) : 5172 - 5184
  • [34] Reactive ion etching of InP/InAlGaAs/InGaAs heterostructures
    Lemm, C
    Kollakowski, S
    Bimberg, D
    Janiak, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (09) : L255 - L257
  • [35] Shock-tracking algorithm for surface evolution under reactive-ion etching
    1600, American Inst of Physics, Woodbury, NY, USA (74):
  • [36] Nanostructure fabrication by reactive-ion etching of laser-focused chromium on silicon
    Natl Inst of Standards and, Technology, Gaithersburg, United States
    Appl Phys B, 1 (95-98):
  • [37] REACTIVE-ION ETCHING GOES COMMERCIAL, PROMISING TO BOOST LSI AND VLSI YIELDS
    COHEN, C
    ELECTRONICS-US, 1980, 53 (24): : 76 - +
  • [38] Nanostructure fabrication by reactive-ion etching of laser-focused chromium on silicon
    McClelland, JJ
    Gupta, R
    Celotta, RJ
    Porkolab, GA
    APPLIED PHYSICS B-LASERS AND OPTICS, 1998, 66 (01): : 95 - 98
  • [39] Trimethylamine:: Novel source far low damage reactive ion beam etching of InP
    Carlström, CF
    Anand, S
    Landgren, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2660 - 2663
  • [40] REACTIVE-ION ETCHING-INDUCED DAMAGE IN MOS DEVICES FOR ULSI CIRCUITS
    MANCHANDA, L
    SCHUTZ, RJ
    VANHISE, CW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C119 - C119