STRUCTURAL DEFECTS IN INDIUM-DOPED GASB CRYSTALS

被引:0
|
作者
MOROZOV, AN [1 ]
SMIRNOV, VM [1 ]
MILVIDSKAYA, AG [1 ]
BUBLIK, VT [1 ]
KOLCHINA, GP [1 ]
机构
[1] MOSCOW RARE MET IND RES INST,MOSCOW,USSR
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:328 / 330
页数:3
相关论文
共 50 条
  • [41] Optical properties of indium-doped ZnO films
    Cao, YG
    Miao, L
    Tanemura, S
    Tanemura, M
    Kuno, Y
    Hayashi, Y
    Mori, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3A): : 1623 - 1628
  • [42] SPECTRAL DEPENDENCE OF PHOTOCONDUCTIVITY IN INDIUM-DOPED SILICON
    MASON, HW
    BLAKEMORE, JS
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2810 - +
  • [43] PRECIPITATION EFFECTS IN INDIUM-DOPED ZINC SELENIDE
    RUSSELL, GJ
    VINCENT, B
    WOODS, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 63 (02): : 573 - 584
  • [44] ELECTROPHYSICAL PROPERTIES OF INDIUM-DOPED BISMUTH TELLURIDE
    ZHITINSKAYA, MK
    NEMOV, SA
    RAVICH, YI
    ABAIDULINA, TG
    KOMPANEETS, VV
    BUSHMARINA, GS
    DRABKIN, IA
    SEMICONDUCTORS, 1993, 27 (10) : 952 - 954
  • [45] OPTOELECTRONIC PROPERTIES OF INDIUM-DOPED ZINC SELENIDE
    MAKHNII, VP
    MELNIK, VV
    SOBISHCHANSKII, BM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (06): : 638 - 639
  • [46] INDIUM-DOPED GAAS - INVESTIGATION OF DEEP TRAPS
    LAURENTI, JP
    WOLTER, K
    ROENTGEN, P
    SEIBERT, K
    KURZ, H
    CAMASSEL, J
    PHYSICAL REVIEW B, 1989, 39 (09): : 5934 - 5946
  • [47] NEW ACCEPTOR LEVEL IN INDIUM-DOPED SILICON
    BARON, R
    YOUNG, MH
    NEELAND, JK
    MARSH, OJ
    APPLIED PHYSICS LETTERS, 1977, 30 (11) : 594 - 596
  • [48] CHARACTERIZATION OF INDIUM-DOPED SNS2
    AMIR, O
    LIFSHITZ, E
    UZANSAGUY, C
    KALISH, R
    EUROPEAN JOURNAL OF SOLID STATE AND INORGANIC CHEMISTRY, 1994, 31 (07): : 631 - 648
  • [49] INVESTIGATION OF INDIUM-DOPED LEAD-TELLURIDE
    KAIDANOV, VI
    MELNIK, RB
    CHERNIK, IA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04): : 522 - 524