STRUCTURAL DEFECTS IN INDIUM-DOPED GASB CRYSTALS

被引：0
|
作者：
MOROZOV, AN [1 ]
SMIRNOV, VM [1 ]
MILVIDSKAYA, AG [1 ]
BUBLIK, VT [1 ]
KOLCHINA, GP [1 ]
机构：
[1] MOSCOW RARE MET IND RES INST,MOSCOW,USSR
来源：
INORGANIC MATERIALS | 1987年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：328 / 330
页数：3
相关论文
共 50 条
  • [21] Indium-doped zinc oxide nanobelts
    Jie, JS
    Wang, GZ
    Han, XH
    Yu, QX
    Liao, Y
    Li, GP
    Hou, JG
    CHEMICAL PHYSICS LETTERS, 2004, 387 (4-6) : 466 - 470
  • [22] Synthesis and properties of indium-doped hematite
    Krehula, Stjepko
    Ristić, Mira
    Reissner, Michael
    Kubuki, Shiro
    Musić, Svetozar
    Journal of Alloys and Compounds, 2017, 695 : 1900 - 1907
  • [23] Optical and structural characterization of GaSb and Te-doped GaSb single crystals
    Tirado-Mejia, L.
    Villada, J. A.
    de los Rios, M.
    Penafiel, J. A.
    Fonthal, G.
    Espinosa-Arbelaez, D. G.
    Ariza-Calderon, H.
    Rodriguez-Garcia, M. E.
    PHYSICA B-CONDENSED MATTER, 2008, 403 (21-22) : 4027 - 4032
  • [24] SOLUTION GROWTH OF INDIUM-DOPED SILICON
    SCOTT, W
    HAGER, RJ
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 581 - 602
  • [25] Faulted dipoles in Indium-doped GaAs
    Yonenaga, I
    Brown, PD
    Burgess, WG
    Humphreys, CJ
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 87 - 90
  • [26] IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM
    BLAKEMORE, JS
    PHILOSOPHICAL MAGAZINE, 1959, 4 (41): : 560 - 576
  • [27] OPTICAL PROPERTIES OF INDIUM-DOPED SILICON
    NEWMAN, R
    PHYSICAL REVIEW, 1955, 99 (02): : 465 - 467
  • [28] DEEP LEVELS IN INDIUM-DOPED GAAS
    KAMINSKI, P
    NIZINKI, Z
    MATERNA, A
    ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 331 - 333
  • [29] SUPERSHALLOW LEVELS IN INDIUM-DOPED SILICON
    CEROFOLINI, GF
    PIGNATEL, GU
    MAZZEGA, E
    OTTAVIANI, G
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2204 - 2207
  • [30] PHOTOELECTRIC PROPERTIES OF INDIUM-DOPED SILICON
    GODIK, EE
    SINIS, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (03): : 347 - 348
12345