VOLTAGE OFFSETS IN (PB,LA)(ZR,TI)O-3 THIN-FILMS

被引:243
|
作者
PIKE, GE
WARREN, WL
DIMOS, D
TUTTLE, BA
RAMESH, R
LEE, J
KERAMIDAS, VG
EVANS, JT
机构
[1] BELLCORE,RED BANK,NJ 07701
[2] RADIAT TECHNOL INC,ALBUQUERQUE,NM 87106
关键词
D O I
10.1063/1.114064
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cooling (Pb,La)(Zr,Ti)O3 films from their pulsed laser deposition temperature in a reducing ambient yields a voltage offset in the polarization-voltage characteristics. Reversing the as-processed polarization at 120°C nearly removes the offset. By reversing the polarization at room temperature and either heating the film at zero voltage or illuminating the film with UV light, the offset can be partially changed. All changes are recoverable using the same processes with opposite polarity polarization. This behavior is explained by a process-induced accumulation of oxygen vacancies at one interface, oxygen vacancy defect-dipole complexes throughout the film, and trapping of free electrons at the interface of positive polarization. Voltage offset and shift effects are not observed in films cooled in 1 atm of oxygen © 1995 American Institute of Physics.
引用
下载
收藏
页码:484 / 486
页数:3
相关论文
共 50 条
  • [31] Piezoelectric characterization of Pb(Zr,Ti)O-3 thin films by interferometric technique
    Kholkin, AL
    Tagantsev, AK
    Brooks, KG
    Taylor, DV
    Setter, N
    ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 351 - 354
  • [32] FATIGUE CHARACTERISTICS OF FERROELECTRIC (PB0.925LA0.075)(ZR0.65TI0.35)(0.981)O-3 THIN-FILMS
    HUANG, LB
    LI, ZY
    LIU, ZJ
    MIAO, XS
    LU, DX
    CHINESE SCIENCE BULLETIN, 1995, 40 (09): : 784 - 787
  • [33] PREPARATION AND ELECTRICAL-PROPERTIES OF FERROELECTRIC (PB,LA)(ZR,TI)O-3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    TOMINAGA, K
    SAKASHITA, Y
    NAKASHIMA, H
    OKADA, M
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 219 - 225
  • [34] Domain structures in Pb(Zr,Ti)O-3 and PbTiO3 thin films
    Madsen, LD
    Griswold, EM
    Weaver, L
    JOURNAL OF MATERIALS RESEARCH, 1997, 12 (10) : 2612 - 2616
  • [35] ELECTROOPTICAL AND OPTICAL EVALUATION OF PB(ZR, TI)O-3 THIN-FILMS USING WAVE-GUIDE REFRACTOMETRY
    POTTER, BG
    SINCLAIR, MB
    DIMOS, D
    TUTTLE, BA
    SCHWARTZ, RW
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1994, 178 : 69 - 76
  • [36] PROPERTIES OF FERROELECTRIC PB(ZR,TI)O-3 THIN-FILMS OIL TISI2/SI SUBSTRATES
    HATANO, H
    OKAMURA, S
    ANDO, S
    TSUKAMOTO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (9B): : 5263 - 5265
  • [37] EFFECTS OF O-3 ON GROWTH AND ELECTRICAL-PROPERTIES OF PB(ZR, TI)O-3 THIN-FILMS BY PHOTOENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    SHIMIZU, M
    FUJISAWA, H
    SUGIYAMA, M
    SHIOSAKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5135 - 5138
  • [38] Activation field of ferroelectric (Pb,La)(Zr,Ti)O-3 thin film capacitors
    Song, TK
    Aggarwal, S
    Prakash, AS
    Yang, B
    Ramesh, R
    APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2211 - 2213
  • [39] RUO2 BOTTOM ELECTRODES FOR FERROELECTRIC (PB,LA)(ZR,TI)O-3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    TAKAGI, T
    OIZUKI, I
    KOBAYASHI, I
    OKADA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A): : 4104 - 4107
  • [40] EPITAXIAL-GROWTH OF FERROELECTRIC PLZT [(PB,LA)(ZR,TI)O3] THIN-FILMS
    ISHIDA, M
    TSUJI, S
    KIMURA, K
    MATSUNAMI, H
    TANAKA, T
    JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 393 - 398