Domain structures in Pb(Zr,Ti)O-3 and PbTiO3 thin films

被引:9
|
作者
Madsen, LD
Griswold, EM
Weaver, L
机构
[1] MCMASTER UNIV,DEPT MAT SCI & ENGN,HAMILTON,ON L8S 4M1,CANADA
[2] QUEENS UNIV,KINGSTON,ON K7L 3N6,CANADA
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1557/JMR.1997.0347
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microstructure of Pb(Zr, Ti)O-3 (PZT) and PbTiO3 (PT) thin films deposited by the sol-gel method and chemical vapor deposition, respectively, were examined by transmission electron microscopy (TEM). Domains with similar to 7 and similar to 20 nm widths were found for the PZT and PT thin films, respectively. The traditional parallel twin or wedge-type structures found in bulk ceramics have been observed in thin films. Differences between observed grain sizes and previous studies of similar compounds (in bulk form) are accounted for by geometrical considerations related to crystallographic factors. Finally, a classification scheme for domains in PZT and PT thin films based on these and other published results of several researchers is presented. Domain sizes varied according to three categories: mono-domains (2-50 nm in diameter), domains in spherulite lamellae (28-130 nm wide), and twins in conventional large grains (5-150 nm wide). The mono-domains are related to small grain sizes, while the lamellae are a function of the nucleation and growth associated with sol-gel processing.
引用
收藏
页码:2612 / 2616
页数:5
相关论文
共 50 条
  • [1] Domain structures in Pb(Zr, Ti)O3 and PbTiO3 thin films
    L. D. Madsen
    E. M. Griswold
    L. Weaver
    [J]. Journal of Materials Research, 1997, 12 : 2612 - 2616
  • [2] MICROSTRUCTURE AND DOMAIN CONFIGURATIONS IN FERROELECTRIC PBTIO3 AND PB(ZR,TI)O-3 THIN-FILMS
    ZHU, JG
    ALJASSIM, MM
    HUFFMAN, M
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (07) : 885 - 891
  • [3] Properties of PbTiO3, La-modified PbTiO3 and Pb(Zr,Ti)O-3 thin films and their application to infrared detectors
    Ren, W
    Liu, Y
    Wu, XQ
    Zhang, LY
    Yao, X
    [J]. INTEGRATED FERROELECTRICS, 1997, 15 (1-4) : 271 - 279
  • [4] PT(PbTiO3) buffer layer effects on the electrical properties of Pb(Zr,Ti)O-3 thin films
    Cho, NH
    Kim, HG
    [J]. MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 243 - 246
  • [5] Sol-gel derived Pb(Zr,Ti)O-3 thin films: Effects of PbTiO3 interlayer
    Shyu, JJ
    Lee, PC
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07): : 3954 - 3959
  • [6] CONTROL OF ORIENTATION OF PB(ZR, TI)O-3 THIN-FILMS USING PBTIO3 BUFFER LAYER
    SHIMIZU, M
    SUGIYAMA, M
    FUJISAWA, H
    SHIOSAKI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5167 - 5171
  • [7] Pyroelectric properties of Pb(Zr,Ti)O3 and Pb(Zr,Ti)O3/PbTiO3 multilayered thin films
    Liu, WG
    Ko, JS
    Zhu, WG
    [J]. INTEGRATED FERROELECTRICS, 2001, 35 (1-4) : 1857 - 1865
  • [8] Domain structures of PbTiO3 and Pb(Zr,Ti)O3 thin films controlled by tensile strain induced by a Sr(Zr,Ti)O3 buffer layer
    Morikawa, Tomohide
    Kodera, Masanori
    Shimizu, Takao
    Ishihama, Keisuke
    Ehara, Yoshitaka
    Sakata, Osami
    Funakubo, Hiroshi
    [J]. APPLIED PHYSICS LETTERS, 2024, 124 (03)
  • [9] Influence of PbTiO3 buffer layers on microstructural properties of Pb(Zr,Ti)O-3 films deposited by sputtering
    Cattan, E
    Roma, R
    Velu, G
    Jaber, B
    Remiens, D
    Thierry, B
    [J]. FERROELECTRIC THIN FILMS V, 1996, 433 : 291 - 296
  • [10] ORIENTED FERROELECTRIC THIN-FILMS OF PBTIO3,(PB,LA)TIO3, AND PB(ZR,TI)O-3 BY NEBULIZED SPRAY-PYROLYSIS
    RAJU, AR
    RAO, CNR
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (07) : 896 - 898