Sol-gel derived Pb(Zr,Ti)O-3 thin films: Effects of PbTiO3 interlayer

Pb(Zr, Ti)O-3 films with PbTiO3 interlayers between the film and Pt/Ti/SiO2/Si(100) substrate were fabricated by using a sol-gel spin-on process. Effects of the PbTiO3 interlayer on the phase formation and electrical properties were investigated. A thin PbTiO3 interlayer of about 0.05 m mu is required to effectively enhance the perovskite formation of the Pb(Zr,Ti)O-3 films, while a thicker PbTiO3 interlayer limits the perovskite formation. The glass-to-pyrochlore transformation is not significantly influenced by the PbTiO3 interlayer. Doping of La into the PbTiO3 interlayer elevates the perovskite formation temperature. The characteristics related to morphotropic phase boundary of the films are significantly weakened by the PbTiO3 interlayer. The fatigue behavior of the films is generally improved by the PbTiO3 interlayer. It is suggested that atomic diffusion between the Pb(Zr, Ti)O-3 film and PbTiO3 interlayer influences the observed electrical properties.