STRUCTURE, STABILITY, AND ELECTRONIC-PROPERTIES OF PSEUDOMORPHIC (SI)(N) (GE)(M) SUPERLATTICES

被引：4
|
作者：
KELIRES, PC
TSERBAK, C
THEODOROU, G
机构：
[1] FDN RES & TECHNOL HELLAS,GR-71110 IRAKLION,GREECE
[2] ARISTOTELIAN UNIV THESSALONIKI,DEPT PHYS,GR-54006 THESSALONIKI,GREECE
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.48.14238
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the structure, energetics, and electronic properties of (Si)5/(Ge)5 and (Si)3/(Ge)4 superlattices. Our analysis, based on the empirical-potential approach, shows that the thermodynamic stability of these superlattices decreases with increasing substrate lattice constant. Electronic properties are inferred from tight-binding calculations. Use of the interatomic distances obtained here and of those given by elastic theory leads to similar results for the band structure and transition probabilities.
引用
收藏
页码：14238 / 14241
页数：4
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