EFFECT OF CHARGE CARRIER CONCENTRATION IN A SEMICONDUCTOR ON VOLTAGE-CURRENT CHARACTERISTICS OF DIODES WITH SCHOTTKY-BARRIER AT LOW-TEMPERATURE

被引：0
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作者：
BOZHKOV, VG
MALAKHOVSKII, OY
机构：
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1986年 / 29卷 / 10期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：87 / 93
页数：7
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