EFFECT OF CHARGE CARRIER CONCENTRATION IN A SEMICONDUCTOR ON VOLTAGE-CURRENT CHARACTERISTICS OF DIODES WITH SCHOTTKY-BARRIER AT LOW-TEMPERATURE

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作者：

BOZHKOV, VG

MALAKHOVSKII, OY

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IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1986年 / 29卷 / 10期

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O4 [物理学];

学科分类号：

0702 ;

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页码：87 / 93

页数：7

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