ETCHING OF SIO2 AND SI IN A HE-F2 PLASMA

被引：13
|
作者：
VASILE, MJ
机构：
[1] Bell Laboratories, Murray Hill, NJ 07974, United States
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 05期
关键词：
PLASMAS - SEMICONDUCTING SILICON;
D O I：
10.1063/1.327971
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2510 / 2515
页数：6
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