REACTIVE SPUTTERING OF GALLIUM NITRIDE THIN-FILMS FOR GAAS MIS STRUCTURES

被引：47

|

作者：

HARIU, T

USUBA, T

ADACHI, H

SHIBATA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 04期

关键词：

D O I：

10.1063/1.90009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：252 / 253

页数：2

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